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FGA25N120ANTDTU

IGBT Transistor 1200V 25A 312W

  • Technology / Family: npt trench
  • The presence of a built-in diode: Yes
  • Maximum voltage KE, V: 1200
  • Maximum CE current at 25 ° C, A: 50
  • Collector impulse current (Icm), A: 90
  • Saturation voltage at rated current, V: 2.65
  • Maximum power dissipation, W: 312
    • IGBT Transistor 1200V 25A 312W, Built-in Diode [TO-3PN]


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Description

Discrete IGBTs, 1000V and over, Fairchild Semiconductor.

Nom. number 9020003351
Technology / Family npt trench
The presence of a built-in diode Yes
Maximum voltage KE, V 1200
Maximum CE current at 25 ° C, A 50
Collector impulse current (Icm), A 90
Saturation voltage at rated current, V 2.65
Maximum power dissipation, W 312
On delay time (td (on)) at 25 ° C, ns 50
Off delay time (td (off)) at 25 ° C, ns 190
Operating Temperature (Tj), ° C -55 … + 150
Housing to-3p
Weight g 6.5
Manufacturer ON Semiconductor
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