FGA25N120ANTDTU
IGBT Transistor 1200V 25A 312W
- Technology / Family: npt trench
- The presence of a built-in diode: Yes
- Maximum voltage KE, V: 1200
- Maximum CE current at 25 ° C, A: 50
- Collector impulse current (Icm), A: 90
- Saturation voltage at rated current, V: 2.65
- Maximum power dissipation, W: 312
IGBT Transistor 1200V 25A 312W, Built-in Diode [TO-3PN]
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Description
Discrete IGBTs, 1000V and over, Fairchild Semiconductor.
| Nom. number | 9020003351 |
| Technology / Family | npt trench |
| The presence of a built-in diode | Yes |
| Maximum voltage KE, V | 1200 |
| Maximum CE current at 25 ° C, A | 50 |
| Collector impulse current (Icm), A | 90 |
| Saturation voltage at rated current, V | 2.65 |
| Maximum power dissipation, W | 312 |
| On delay time (td (on)) at 25 ° C, ns | 50 |
| Off delay time (td (off)) at 25 ° C, ns | 190 |
| Operating Temperature (Tj), ° C | -55 … + 150 |
| Housing | to-3p |
| Weight g | 6.5 |
| Manufacturer | ON Semiconductor |
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