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J112

Transistor

  • Structure: n channel
  • Breakdown voltage (V (br) gss), V: 25
  • Leakage Current (Idss), mA: 1 … 5
  • At Vds, V (Vgs = 0): 15
  • Cutoff voltage (Vgs off), V: 6 (max)
  • At Id, nA: 10
  • Maximum power dissipation, W: 0.31
    • Transistor, N-channel 35V 50mA [TO-92]


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Description

N-channel JFET, Fairchild Semiconductor.

Nom. number 2878504801
Structure n channel
Breakdown voltage (V (br) gss), V 35
Leakage Current (Idss), mA 5 (min)
At Vds, V (Vgs = 0) 15
Cutoff voltage (Vgs off), V 1 … 5
At Id, nA 1000
Channel Resistance (RDS (On)), Ohm 50 (max)
Maximum power dissipation, W 0.625
Operating Temperature (Tj), ° C -55 … + 150
Housing to-92
Weight g 0.3
Manufacturer Fairchild Semiconductor
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